NTMFS4854NST1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4854NST1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 15.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 1130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: SO-8FL

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NTMFS4854NST1G datasheet

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NTMFS4854NST1G

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

 3.1. Size:120K  onsemi
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NTMFS4854NST1G

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

 6.1. Size:107K  onsemi
 ntmfs4852nt1g.pdf pdf_icon

NTMFS4854NST1G

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

 6.2. Size:137K  onsemi
 ntmfs4852n.pdf pdf_icon

NTMFS4854NST1G

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

MOSTRAR MÁS

Otros transistores... NTMFS4841NT1G, NTMFS4845NT1G, NTMFS4846NT1G, NTMFS4847NAT1G, NTMFS4847NT1G, NTMFS4849NT1G, NTMFS4851NT1G, NTMFS4852NT1G, IRFB7545, NTMFS4897NFT1G, NTMFS4898NFT1G, NTMFS4899NFT1G, NTMFS4921NT1G, NTMFS4922NE, NTMFS4923NET1G, NTMFS4925NE, NTMFS4925NT1G