All MOSFET. NTMFS4854NST1G Datasheet

 

NTMFS4854NST1G Datasheet and Replacement


   Type Designator: NTMFS4854NST1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 15.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: SO-8FL
 

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NTMFS4854NST1G Datasheet (PDF)

 ..1. Size:110K  onsemi
 ntmfs4854nst1g.pdf pdf_icon

NTMFS4854NST1G

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

 3.1. Size:120K  onsemi
 ntmfs4854ns.pdf pdf_icon

NTMFS4854NST1G

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

 6.1. Size:107K  onsemi
 ntmfs4852nt1g.pdf pdf_icon

NTMFS4854NST1G

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

 6.2. Size:137K  onsemi
 ntmfs4852n.pdf pdf_icon

NTMFS4854NST1G

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

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Datasheet: NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , IRF520 , NTMFS4897NFT1G , NTMFS4898NFT1G , NTMFS4899NFT1G , NTMFS4921NT1G , NTMFS4922NE , NTMFS4923NET1G , NTMFS4925NE , NTMFS4925NT1G .

Keywords - NTMFS4854NST1G MOSFET datasheet

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