NTMFS4899NFT1G Todos los transistores

 

NTMFS4899NFT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4899NFT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.92 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.3 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: SO-8FL
 

 Búsqueda de reemplazo de NTMFS4899NFT1G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTMFS4899NFT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 ntmfs4899nft1g.pdf pdf_icon

NTMFS4899NFT1G

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V

 3.1. Size:105K  onsemi
 ntmfs4899nf.pdf pdf_icon

NTMFS4899NFT1G

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V

 6.1. Size:104K  onsemi
 ntmfs4897nft1g.pdf pdf_icon

NTMFS4899NFT1G

NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C

 6.2. Size:105K  onsemi
 ntmfs4898nft1g.pdf pdf_icon

NTMFS4899NFT1G

NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V

MOSTRAR MÁS

Otros transistores... NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , NTMFS4854NST1G , NTMFS4897NFT1G , NTMFS4898NFT1G , EMB04N03H , NTMFS4921NT1G , NTMFS4922NE , NTMFS4923NET1G , NTMFS4925NE , NTMFS4925NT1G , NTMFS4926NE , NTMFS4926NT1G , NTMFS4927NCT1G .

 

 
Back to Top

 


 
.