NTMFS4899NFT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4899NFT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.92 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.3 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS4899NFT1G MOSFET
NTMFS4899NFT1G Datasheet (PDF)
ntmfs4899nft1g.pdf

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4899nf.pdf

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4897nft1g.pdf

NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C
ntmfs4898nft1g.pdf

NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
Otros transistores... NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , NTMFS4854NST1G , NTMFS4897NFT1G , NTMFS4898NFT1G , 2SK3918 , NTMFS4921NT1G , NTMFS4922NE , NTMFS4923NET1G , NTMFS4925NE , NTMFS4925NT1G , NTMFS4926NE , NTMFS4926NT1G , NTMFS4927NCT1G .
History: IPD30N03S4L-14 | BUK9Y4R4-40E | MMIX1F360N15T2 | NCE50NF600I | AP40T03GJ-HF | 2N6917 | MTP2955
History: IPD30N03S4L-14 | BUK9Y4R4-40E | MMIX1F360N15T2 | NCE50NF600I | AP40T03GJ-HF | 2N6917 | MTP2955



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