All MOSFET. NTMFS4899NFT1G Datasheet

 

NTMFS4899NFT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS4899NFT1G
   Marking Code: 4899NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   trⓘ - Rise Time: 20.3 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SO-8FL

 NTMFS4899NFT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4899NFT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 ntmfs4899nft1g.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V

 3.1. Size:105K  onsemi
 ntmfs4899nf.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V

 6.1. Size:104K  onsemi
 ntmfs4897nft1g.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C

 6.2. Size:105K  onsemi
 ntmfs4898nft1g.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V

 6.3. Size:138K  onsemi
 ntmfs4897nf.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.0 mW @ 10 V CPU Power Delivery30 V171

 6.4. Size:139K  onsemi
 ntmfs4898nf.pdf

NTMFS4899NFT1G NTMFS4899NFT1G

NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V

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