NTMFS4899NFT1G Datasheet. Specs and Replacement

Type Designator: NTMFS4899NFT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.3 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SO-8FL

NTMFS4899NFT1G substitution

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NTMFS4899NFT1G datasheet

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NTMFS4899NFT1G

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V ... See More ⇒

 3.1. Size:105K  onsemi
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NTMFS4899NFT1G

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V ... See More ⇒

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 ntmfs4897nft1g.pdf pdf_icon

NTMFS4899NFT1G

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 30 V 171 A Applications 3.0 mW @ 4.5 V C... See More ⇒

 6.2. Size:105K  onsemi
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NTMFS4899NFT1G

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V ... See More ⇒

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Detailed specifications: NTMFS4847NAT1G, NTMFS4847NT1G, NTMFS4849NT1G, NTMFS4851NT1G, NTMFS4852NT1G, NTMFS4854NST1G, NTMFS4897NFT1G, NTMFS4898NFT1G, EMB04N03H, NTMFS4921NT1G, NTMFS4922NE, NTMFS4923NET1G, NTMFS4925NE, NTMFS4925NT1G, NTMFS4926NE, NTMFS4926NT1G, NTMFS4927NCT1G

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