NTMFS4H01NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4H01NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 54 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42.3 nS

Cossⓘ - Capacitancia de salida: 3416 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0007 Ohm

Encapsulados: SO-8FL

  📄📄 Copiar 

 Búsqueda de reemplazo de NTMFS4H01NF MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTMFS4H01NF datasheet

 ..1. Size:84K  onsemi
ntmfs4h01nf.pdf pdf_icon

NTMFS4H01NF

NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) T

 4.1. Size:81K  onsemi
ntmfs4h01n.pdf pdf_icon

NTMFS4H01NF

NTMFS4H01N Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications

 5.1. Size:89K  onsemi
ntmfs4h013nf.pdf pdf_icon

NTMFS4H01NF

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT

 6.1. Size:86K  onsemi
ntmfs4h02nf.pdf pdf_icon

NTMFS4H01NF

NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances www.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on)

Otros transistores... NTMFS4C05N, NTMFS4C06N, NTMFS4C08N, NTMFS4C09NT1G, NTMFS4C10N, NTMFS4C13N, NTMFS4C35N, NTMFS4H01N, IRFP250N, NTMFS4H02N, NTMFS4H02NF, NTMFS5830NLT1G, NTMFS5832NLT1G, NTMFS5834NLT1G, NTMFS5844NLT1G, NTMFS5C404NL, NTMFS5C404NLT