NTMFS4H01NF - Даташиты. Аналоги. Основные параметры
Наименование производителя: NTMFS4H01NF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 54 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 42.3 ns
Cossⓘ - Выходная емкость: 3416 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0007 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4H01NF
NTMFS4H01NF Datasheet (PDF)
ntmfs4h01nf.pdf

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T
ntmfs4h01n.pdf

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications
ntmfs4h013nf.pdf

NTMFS4H013NFPower MOSFET25 V, 269 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOT
ntmfs4h02nf.pdf

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)
Другие MOSFET... NTMFS4C05N , NTMFS4C06N , NTMFS4C08N , NTMFS4C09NT1G , NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , AON7408 , NTMFS4H02N , NTMFS4H02NF , NTMFS5830NLT1G , NTMFS5832NLT1G , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT .
History: AO4614 | NTMFS5C442NLT | PMZB290UNE2
History: AO4614 | NTMFS5C442NLT | PMZB290UNE2



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073