NTMFS5832NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5832NLT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de NTMFS5832NLT1G MOSFET
NTMFS5832NLT1G Datasheet (PDF)
ntmfs5832nlt1g.pdf

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @
ntmfs5832nl.pdf

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @
ntmfs5830nl.pdf

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @
ntmfs5834nlt1g.pdf

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 AQualified and PPAP Capable13.6 mW @ 4.5 V
Otros transistores... NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , NTMFS4H01NF , NTMFS4H02N , NTMFS4H02NF , NTMFS5830NLT1G , IRFP260 , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT , NTMFS5C410NL , NTMFS5C410NLT , NTMFS5C423NL , NTMFS5C442NL .
History: RUE002N02TL | IRF1010H | HGB095NE4SL | WFF5N60C | APT97N65LC6
History: RUE002N02TL | IRF1010H | HGB095NE4SL | WFF5N60C | APT97N65LC6



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