NTMFS5832NLT1G Specs and Replacement
Type Designator: NTMFS5832NLT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: DFN5
NTMFS5832NLT1G substitution
NTMFS5832NLT1G datasheet
ntmfs5832nlt1g.pdf
NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @ ... See More ⇒
ntmfs5832nl.pdf
NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @ ... See More ⇒
ntmfs5830nl.pdf
NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @ ... See More ⇒
ntmfs5834nlt1g.pdf
NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A Qualified and PPAP Capable 13.6 mW @ 4.5 V ... See More ⇒
Detailed specifications: NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , NTMFS4H01NF , NTMFS4H02N , NTMFS4H02NF , NTMFS5830NLT1G , 2SK3878 , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT , NTMFS5C410NL , NTMFS5C410NLT , NTMFS5C423NL , NTMFS5C442NL .
History: APM4220 | TSM4NB60CI
Keywords - NTMFS5832NLT1G MOSFET specs
NTMFS5832NLT1G cross reference
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NTMFS5832NLT1G substitution
NTMFS5832NLT1G replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: APM4220 | TSM4NB60CI
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