All MOSFET. NTMFS5832NLT1G Datasheet

 

NTMFS5832NLT1G Datasheet and Replacement


   Type Designator: NTMFS5832NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DFN5
 

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NTMFS5832NLT1G Datasheet (PDF)

 ..1. Size:107K  onsemi
 ntmfs5832nlt1g.pdf pdf_icon

NTMFS5832NLT1G

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @

 3.1. Size:116K  onsemi
 ntmfs5832nl.pdf pdf_icon

NTMFS5832NLT1G

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @

 6.1. Size:113K  onsemi
 ntmfs5830nl.pdf pdf_icon

NTMFS5832NLT1G

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @

 6.2. Size:104K  onsemi
 ntmfs5834nlt1g.pdf pdf_icon

NTMFS5832NLT1G

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 AQualified and PPAP Capable13.6 mW @ 4.5 V

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Datasheet: NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , NTMFS4H01NF , NTMFS4H02N , NTMFS4H02NF , NTMFS5830NLT1G , 8205A , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT , NTMFS5C410NL , NTMFS5C410NLT , NTMFS5C423NL , NTMFS5C442NL .

History: DHI10H037R | NDP05N50Z | SWN7N70D

Keywords - NTMFS5832NLT1G MOSFET datasheet

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