NTMFS5C404NLT Todos los transistores

 

NTMFS5C404NLT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C404NLT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 4538 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00075 Ohm
   Paquete / Cubierta: DFN5
     - Selección de transistores por parámetros

 

NTMFS5C404NLT Datasheet (PDF)

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NTMFS5C404NLT

NTMFS5C404NLTPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

 0.1. Size:168K  1
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NTMFS5C404NLT

MOSFET Power, Single,N-Channel40 V, 0.67 mW, 370 ANTMFS5C404NLTFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced0.67 mW @ 10 V40 V370 AOptical Inspection1.0 mW @ 4.

 2.1. Size:74K  onsemi
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NTMFS5C404NLT

NTMFS5C404NLPower MOSFET40 V, 0.75 mW, 339 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.75 mW @ 10 V

 3.1. Size:161K  1
ntmfs5c404nt3g.pdf pdf_icon

NTMFS5C404NLT

MOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 ANTMFS5C404NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other

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