NTMFS5C404NLT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS5C404NLT
Маркировка: 5C404L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.9 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 49 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 81 nC
Время нарастания (tr): 135 ns
Выходная емкость (Cd): 4538 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00075 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5C404NLT
NTMFS5C404NLT Datasheet (PDF)
ntmfs5c404nlt.pdf
NTMFS5C404NLTPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co
ntmfs5c404nltt1g.pdf
MOSFET Power, Single,N-Channel40 V, 0.67 mW, 370 ANTMFS5C404NLTFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced0.67 mW @ 10 V40 V370 AOptical Inspection1.0 mW @ 4.
ntmfs5c404nl.pdf
NTMFS5C404NLPower MOSFET40 V, 0.75 mW, 339 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.75 mW @ 10 V
ntmfs5c404nt3g.pdf
MOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 ANTMFS5C404NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c404n.pdf
NTMFS5C404NMOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other
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