NTMS4176PR2G Todos los transistores

 

NTMS4176PR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4176PR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.81 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SOIC-8
 

 Búsqueda de reemplazo de NTMS4176PR2G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTMS4176PR2G Datasheet (PDF)

 ..1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4176PR2G

NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

 7.1. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4176PR2G

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 7.2. Size:86K  onsemi
 ntms4177p.pdf pdf_icon

NTMS4176PR2G

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 7.3. Size:853K  cn vbsemi
 ntms4177pr.pdf pdf_icon

NTMS4176PR2G

NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

MOSTRAR MÁS

Otros transistores... NTMFS5C670NL , NTMFS6B03N , NTMFS6B05N , NTMFS6B14N , NTMS10P02R2G , NTMS3P03R2 , NTMS4101PR2 , NTMS4107NR2G , IRLB4132 , NTMS4177PR2G , NTMS4404NR2 , NTMS4503NR2 , NTMS4700NR2 , NTMS4705NR2G , NTMS4706NR2 , NTMS4706NR2G , NTMS4800NR2G .

History: IRFIBC30GPBF | SRC60R068BSTL | SE1991GA | STFW1N105K3 | 2SK1180 | AP4407GM | MTP15N05LFI

 

 
Back to Top

 


 
.