NTMS4176PR2G Datasheet. Specs and Replacement

Type Designator: NTMS4176PR2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOIC-8

NTMS4176PR2G substitution

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NTMS4176PR2G datasheet

 ..1. Size:86K  onsemi
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NTMS4176PR2G

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m... See More ⇒

 7.1. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4176PR2G

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19... See More ⇒

 7.2. Size:86K  onsemi
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NTMS4176PR2G

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19... See More ⇒

 7.3. Size:853K  cn vbsemi
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NTMS4176PR2G

NTMS4177PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P... See More ⇒

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Detailed specifications: NTMFS5C670NL, NTMFS6B03N, NTMFS6B05N, NTMFS6B14N, NTMS10P02R2G, NTMS3P03R2, NTMS4101PR2, NTMS4107NR2G, CS150N03A8, NTMS4177PR2G, NTMS4404NR2, NTMS4503NR2, NTMS4700NR2, NTMS4705NR2G, NTMS4706NR2, NTMS4706NR2G, NTMS4800NR2G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.