NTMS4816NR2G Todos los transistores

 

NTMS4816NR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4816NR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

NTMS4816NR2G Datasheet (PDF)

 ..1. Size:106K  onsemi
ntms4816nr2g.pdf pdf_icon

NTMS4816NR2G

NTMS4816N, NVMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications10

 5.1. Size:88K  onsemi
ntms4816n.pdf pdf_icon

NTMS4816NR2G

NTMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications10 mW @ 10 V Disk Drives30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers

 8.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4816NR2G

NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri

 8.2. Size:115K  onsemi
ntms4873nf-d ntms4873nfr2g.pdf pdf_icon

NTMS4816NR2G

NTMS4873NFPower MOSFET30 V, 11.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device12 mW @ 10 V

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 30N06 | IXFN64N60P | FQB8P10 | SMP40N10 | STY60NM50 | IRF624A | WNM3017

 

 
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