NTMS4916NR2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS4916NR2G  📄📄 

Código: 4916N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V

Qgⓘ - Carga de la puerta: 15 nC

trⓘ - Tiempo de subida: 7.4 nS

Cossⓘ - Capacitancia de salida: 401 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO-8

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NTMS4916NR2G datasheet

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NTMS4916NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A

 5.1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4916NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A

 7.1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4916NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V

 7.2. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4916NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V

MOSTRAR MÁS

Otros transistores... NTMS4706NR2G, NTMS4800NR2G, NTMS4801NR2G, NTMS4802NR2G, NTMS4807NR2G, NTMS4816NR2G, NTMS4872NR2G, NTMS4873NFR2G, SI2302, NTMS4917NR2G, NTMS4937NR2G, NTMS4939NR2G, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, NTMS5P02R2G