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NTMS4916NR2G Spec and Replacement


   Type Designator: NTMS4916NR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8

 NTMS4916NR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS4916NR2G Specs

 ..1. Size:109K  onsemi
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NTMS4916NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A... See More ⇒

 5.1. Size:136K  onsemi
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NTMS4916NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A... See More ⇒

 7.1. Size:114K  onsemi
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NTMS4916NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V ... See More ⇒

 7.2. Size:103K  onsemi
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NTMS4916NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V ... See More ⇒

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Detailed specifications: NTMS4706NR2G , NTMS4800NR2G , NTMS4801NR2G , NTMS4802NR2G , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , NTMS4873NFR2G , SI2302 , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G , NTMS5P02R2G .

History: NTMS4816NR2G

Keywords - NTMS4916NR2G MOSFET specs

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