All MOSFET. NTMS4916NR2G Datasheet

 

NTMS4916NR2G Datasheet and Replacement


   Type Designator: NTMS4916NR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8
 

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NTMS4916NR2G Datasheet (PDF)

 ..1. Size:109K  onsemi
 ntms4916nr2g.pdf pdf_icon

NTMS4916NR2G

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

 5.1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4916NR2G

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

 7.1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4916NR2G

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

 7.2. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4916NR2G

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

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Datasheet: NTMS4706NR2G , NTMS4800NR2G , NTMS4801NR2G , NTMS4802NR2G , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , NTMS4873NFR2G , IRFZ46N , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G , NTMS5P02R2G .

History: IRLR014N | TK8R2A06PL | 2N7002AK | NTMFS4836N | STK830F | SMK0160 | IXTQ182N055T

Keywords - NTMS4916NR2G MOSFET datasheet

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