NTMS4939NR2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS4939NR2G  📄📄 

Código: 4939N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V

Qgⓘ - Carga de la puerta: 12.4 nC

trⓘ - Tiempo de subida: 3.1 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm

Encapsulados: SO-8

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NTMS4939NR2G datasheet

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NTMS4939NR2G

NTMS4939N Power MOSFET 30 V, 12.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 8.4 mW @ 10 V 30 V

 5.1. Size:197K  onsemi
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NTMS4939NR2G

NTMS4939N MOSFET Power, N-Channel, SO-8 30 V, 12.5 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 8.4 mW @ 10 V 30 V 12.5 A Applications 11 mW @

 7.1. Size:133K  onsemi
 ntms4937nr2g.pdf pdf_icon

NTMS4939NR2G

NTMS4937N Power MOSFET 30 V, 13.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 6.5 mW @ 10 V 30 V

 7.2. Size:133K  onsemi
 ntms4937n.pdf pdf_icon

NTMS4939NR2G

NTMS4937N Power MOSFET 30 V, 13.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 6.5 mW @ 10 V 30 V

MOSTRAR MÁS

Otros transistores... NTMS4802NR2G, NTMS4807NR2G, NTMS4816NR2G, NTMS4872NR2G, NTMS4873NFR2G, NTMS4916NR2G, NTMS4917NR2G, NTMS4937NR2G, 20N50, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, NTMS5P02R2G, NTMS5P02R2SG, NTMS7N03R2G, NTMSD2P102LR2