NTMS4P01R2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMS4P01R2 📄📄
Código: E4P01
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.79 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.15 V
Qgⓘ - Carga de la puerta: 20 nC
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Encapsulados: SO-8
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NTMS4P01R2 datasheet
..1. Size:227K onsemi
ntms4p01r2.pdf 
NTMS4P01R2 Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package Features http //onsemi.com High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency Miniature SO-8 Surface Mount Package - Saves Board Space VDSS RDS(ON) TYP ID MAX Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature -12 V 3
9.1. Size:136K onsemi
ntms4916n.pdf
NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A
9.2. Size:88K onsemi
ntms4807n-d ntms4807nr2g.pdf
NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
9.3. Size:86K onsemi
ntms4176p ntms4176pr2g.pdf
NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m
9.4. Size:77K onsemi
ntms4n01r2-d ntms4n01r2g.pdf
NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N-Channel Enhancement-Mode Single SO-8 Package Features http //onsemi.com High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency 4.2 AMPERES, 20 VOLTS Miniature SO-8 Surface Mount Package Saving Board Space; Mounting Information for the SO-8 Package is Provided 0.045 W @ VGS = 4.5 V IDSS Specified at Eleva
9.5. Size:72K onsemi
ntms4107n-d ntms4107nr2g.pdf
NTMS4107N Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications http //onsemi.com High Speed Switching Capability Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX 3.4 mW @ 10 V Applications 30 V 18 A Notebook Computer Vcore Applications 4.7
9.6. Size:115K onsemi
ntms4873nf-d ntms4873nfr2g.pdf
NTMS4873NF Power MOSFET 30 V, 11.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 12 mW @ 10 V
9.7. Size:67K onsemi
ntms4706n-d ntms4706nr2 ntms4706nr2g.pdf
NTMS4706N Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8 Features Low RDS(on) Low Gate Charge Standard SO-8 Single Package http //onsemi.com Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications (Note 1) Notebooks, Graphics Cards 9.0 mW @ 10 V Synchronous Rectification 30 V 10.3 A 11.4 mW @ 4.5 V High Side Switch DC-DC Convert
9.8. Size:197K onsemi
ntms4939n.pdf
NTMS4939N MOSFET Power, N-Channel, SO-8 30 V, 12.5 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 8.4 mW @ 10 V 30 V 12.5 A Applications 11 mW @
9.9. Size:132K onsemi
ntms4939nr2g.pdf
NTMS4939N Power MOSFET 30 V, 12.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 8.4 mW @ 10 V 30 V
9.10. Size:170K onsemi
ntms4700n ntms4700nr2.pdf
NTMS4700N Power MOSFET 30 V, 14.5 A, Single N-Channel, SO-8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for High Side Control Applications http //onsemi.com High Speed Switching Capability Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX Applications 6.0 mW @ 10 V 30 V 14.5 A Notebook Computer Vcore Applications 7.3
9.11. Size:133K onsemi
ntms4937nr2g.pdf
NTMS4937N Power MOSFET 30 V, 13.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 6.5 mW @ 10 V 30 V
9.12. Size:171K onsemi
ntms4704n.pdf
NTMS4704N Power MOSFET 30 V, 12.3 A, Single N-Channel, SO-8 Features Low RDS(on) Low Gate Charge http //onsemi.com Standard SO-8 Single Package Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications 7.5 mW @ 10 V Notebooks, Graphics Cards 30 V 12.3 A Synchronous Rectification 10 mW @ 4.5 V High Side Switch DC-DC Converters N-Channe
9.13. Size:106K onsemi
ntms4816nr2g.pdf
NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 10
9.14. Size:86K onsemi
ntms4177p ntms4177pr2g.pdf
NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19
9.15. Size:109K onsemi
ntms4916nr2g.pdf
NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A
9.16. Size:188K onsemi
ntms4404nr2.pdf
NTMS4404N Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 Features High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency http //onsemi.com Miniature SO-8 Surface Mount Package Saving Board Space IDSS Specified at Elevated Temperature V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery 9.7 mW @ 10 V 30 V 12 A Applications 15.5 mW @
9.17. Size:131K onsemi
ntms4920n.pdf
NTMS4920N Power MOSFET 30 V, 17 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 4.3 mW @ 10 V 30 V 1
9.18. Size:111K onsemi
ntms4802n ntms4802nr2g.pdf
NTMS4802N Power MOSFET 30 V, 18 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V 30 V 18 A DC-DC Converters 5.5 mW @ 4.5 V Synchronous MOSFET
9.19. Size:114K onsemi
ntms4917n.pdf
NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V
9.20. Size:103K onsemi
ntms4917nr2g.pdf
NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V
9.21. Size:63K onsemi
ntms4503n-d ntms4503nr2.pdf
NTMS4503N Power MOSFET 28 V, 14 A, N-Channel, SOIC-8 Features Low RDS(on) http //onsemi.com High Power and Current Handling Capability Low Gate Charge ID Max Pb-Free Package is Available V(BR)DSS RDS(on) Typ (Note 1) Applications 7.0 mW @ 10 V 28 V 14 A DC/DC Converters 8.8 mW @ 4.5 V Motor Drives Synchronous Rectifier - POL D Buck Low-Side MA
9.22. Size:136K onsemi
ntms4800n.pdf
NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V
9.23. Size:132K onsemi
ntms4800nr2g.pdf
NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V
9.24. Size:112K onsemi
ntms4872n-d ntms4872nr2g.pdf
NTMS4872N Power MOSFET 30 V, 10.2 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 13.5 mW @ 10 V Applications 30 V 10.2 A Disk
9.26. Size:133K onsemi
ntms4937n.pdf
NTMS4937N Power MOSFET 30 V, 13.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 6.5 mW @ 10 V 30 V
9.27. Size:90K onsemi
ntms4705n ntms4705nr2g.pdf
NTMS4705N Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 Features Low RDS(on) Low Gate Charge http //onsemi.com Standard SO-8 Single Package Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX (Note 1) Applications Notebooks, Graphics Cards 8.0 mW @ 10 V 30 V 12 A Synchronous Rectification 10.5 mW @ 4.5 V High Side Switch DC-DC Converters
9.28. Size:88K onsemi
ntms4816n.pdf
NTMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 10 mW @ 10 V Disk Drives 30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers
9.29. Size:88K onsemi
ntms4807n.pdf
NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
9.31. Size:86K onsemi
ntms4177p.pdf
NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19
9.32. Size:166K onsemi
ntms4101pr2.pdf
NTMS4101P Trench Power MOSFET 20 V, 9.0 A, Single P-Channel, SO-8 Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Space http //onsemi.com Lead-Free Package for Green Manufacturing (G Suffix) Applications Power Management V(BR)DSS RDS(on) TYP ID MAX Load Switch 16 mW @ -4.5 V Battery Protection -20 V -9.0 A 22 mW @ -2.5
9.33. Size:853K cn vbsemi
ntms4177pr.pdf
NTMS4177PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P
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