NTMS4P01R2 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMS4P01R2
Marking Code: E4P01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.15 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 635 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
NTMS4P01R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMS4P01R2 Datasheet (PDF)
ntms4p01r2.pdf
NTMS4P01R2Power MOSFET-4.5 Amps, -12 VoltsP-Channel Enhancement-ModeSingle SO-8 PackageFeatureshttp://onsemi.com High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency Miniature SO-8 Surface Mount Package - Saves Board SpaceVDSS RDS(ON) TYP ID MAX Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature -12 V3
ntms4916n.pdf
NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4807n-d ntms4807nr2g.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
ntms4176p ntms4176pr2g.pdf
NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m
ntms4n01r2-d ntms4n01r2g.pdf
NTMS4N01R2Power MOSFET4.2 Amps, 20 VoltsN-Channel Enhancement-ModeSingle SO-8 PackageFeatureshttp://onsemi.com High Density Power MOSFET with Ultra Low RDS(on) ProvidingHigher Efficiency4.2 AMPERES, 20 VOLTS Miniature SO-8 Surface Mount Package Saving Board Space;Mounting Information for the SO-8 Package is Provided0.045 W @ VGS = 4.5 V IDSS Specified at Eleva
ntms4107n-d ntms4107nr2g.pdf
NTMS4107NPower MOSFET30 V, 18 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAX3.4 mW @ 10 VApplications30 V 18 A Notebook Computer Vcore Applications4.7
ntms4873nf-d ntms4873nfr2g.pdf
NTMS4873NFPower MOSFET30 V, 11.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device12 mW @ 10 V
ntms4706n-d ntms4706nr2 ntms4706nr2g.pdf
NTMS4706NPower MOSFET30 V, 10.3 A, Single N-Channel, SO-8Features Low RDS(on) Low Gate Charge Standard SO-8 Single Packagehttp://onsemi.com Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications(Note 1) Notebooks, Graphics Cards9.0 mW @ 10 V Synchronous Rectification30 V 10.3 A11.4 mW @ 4.5 V High Side Switch DC-DC Convert
ntms4939n.pdf
NTMS4939NMOSFET Power,N-Channel, SO-830 V, 12.5 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.4 mW @ 10 V30 V 12.5 AApplications11 mW @
ntms4939nr2g.pdf
NTMS4939NPower MOSFET30 V, 12.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters8.4 mW @ 10 V30 V
ntms4700n ntms4700nr2.pdf
NTMS4700NPower MOSFET30 V, 14.5 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for High Side Control Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAXApplications6.0 mW @ 10 V30 V 14.5 A Notebook Computer Vcore Applications7.3
ntms4937nr2g.pdf
NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V
ntms4704n.pdf
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ntms4816nr2g.pdf
NTMS4816N, NVMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications10
ntms4177p ntms4177pr2g.pdf
NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19
ntms4916nr2g.pdf
NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4404nr2.pdf
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ntms4920n.pdf
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ntms4802n ntms4802nr2g.pdf
NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET
ntms4917n.pdf
NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
ntms4917nr2g.pdf
NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
ntms4503n-d ntms4503nr2.pdf
NTMS4503NPower MOSFET28 V, 14 A, N-Channel, SOIC-8Features Low RDS(on)http://onsemi.com High Power and Current Handling Capability Low Gate ChargeID Max Pb-Free Package is Available V(BR)DSS RDS(on) Typ(Note 1)Applications7.0 mW @ 10 V28 V 14 A DC/DC Converters8.8 mW @ 4.5 V Motor Drives Synchronous Rectifier - POLD Buck Low-SideMA
ntms4800n.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4800nr2g.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4872n-d ntms4872nr2g.pdf
NTMS4872NPower MOSFET30 V, 10.2 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device13.5 mW @ 10 VApplications30 V 10.2 A Disk
ntms4801n.pdf
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4937n.pdf
NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V
ntms4705n ntms4705nr2g.pdf
NTMS4705NPower MOSFET30 V, 12 A, Single N-Channel, SO-8Features Low RDS(on) Low Gate Chargehttp://onsemi.com Standard SO-8 Single Package Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAX(Note 1)Applications Notebooks, Graphics Cards8.0 mW @ 10 V30 V 12 A Synchronous Rectification10.5 mW @ 4.5 V High Side Switch DC-DC Converters
ntms4816n.pdf
NTMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications10 mW @ 10 V Disk Drives30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers
ntms4807n.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
ntms4801nr2g.pdf
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4177p.pdf
NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19
ntms4101pr2.pdf
NTMS4101PTrench Power MOSFET20 V, 9.0 A, Single P-Channel, SO-8Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Spacehttp://onsemi.com Lead-Free Package for Green Manufacturing (G Suffix)Applications Power ManagementV(BR)DSS RDS(on) TYP ID MAX Load Switch16 mW @ -4.5 V Battery Protection-20 V -9.0 A22 mW @ -2.5
ntms4177pr.pdf
NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P
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