NTMS5838NLR2G Todos los transistores

 

NTMS5838NLR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS5838NLR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO-8
 

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NTMS5838NLR2G Datasheet (PDF)

 ..1. Size:105K  onsemi
 ntms5838nlr2g.pdf pdf_icon

NTMS5838NLR2G

NTMS5838NLPower MOSFET40 V, 7.5 A, 20 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)20 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit36.5 mW @ 4.5 VDrain-to-Source Voltage

 4.1. Size:115K  onsemi
 ntms5838nl.pdf pdf_icon

NTMS5838NLR2G

NTMS5838NLPower MOSFET40 V, 7.5 A, 25 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)25 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit30.8 mW @ 4.5 VDrain-to-Source Voltage

 7.1. Size:105K  onsemi
 ntms5835nlr2g.pdf pdf_icon

NTMS5838NLR2G

NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS

 7.2. Size:116K  onsemi
 ntms5835nl.pdf pdf_icon

NTMS5838NLR2G

NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS

MOSTRAR MÁS

Otros transistores... NTMS4873NFR2G , NTMS4916NR2G , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , AON6380 , NTMS5P02R2G , NTMS5P02R2SG , NTMS7N03R2G , NTMSD2P102LR2 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ .

History: TJ15S10M3 | STI24NM60N

 

 
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