NTMSD2P102LR2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMSD2P102LR2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO-8

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NTMSD2P102LR2 datasheet

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NTMSD2P102LR2

NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package High Density Power MOSFET with Low RDS(on), http //onsemi.com Schottky Diode with Low VF Logic Level Gate Drive MOSFET Independent Pin-Outs for MOSFET and Schottky Die -2.3 AMPERES, -20 VOLTS Allowing for Flexibility in Application

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NTMSD2P102LR2

NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), MOSFET Schottky Diode with Low VF -3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die -30 VOLTS Allowing for Flexibility in Application Use

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NTMSD2P102LR2

NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs http //onsemi.com packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a MOSFET space saving configuration. Independent pinouts for MOSFET and 6.0 AMPERES Schottky die allow the flexibi

 9.3. Size:118K  onsemi
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NTMSD2P102LR2

NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF MOSFET Independent Pin-Outs for MOSFET and Schottky Die -3.05 AMPERES Allowing for Flexibility in Application Use -20 VOLT

MOSTRAR MÁS

Otros transistores... NTMS4939NR2G, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, NTMS5P02R2G, NTMS5P02R2SG, NTMS7N03R2G, 75N75, NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ, NTNS3A91PZ, NTNUS3171PZT5G, NTP125N02RG