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NTMSD2P102LR2 Spec and Replacement


   Type Designator: NTMSD2P102LR2
   Marking Code: E2P102
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SO-8

 NTMSD2P102LR2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMSD2P102LR2 Specs

 ..1. Size:95K  onsemi
 ntmsd2p102lr2.pdf pdf_icon

NTMSD2P102LR2

NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package High Density Power MOSFET with Low RDS(on), http //onsemi.com Schottky Diode with Low VF Logic Level Gate Drive MOSFET Independent Pin-Outs for MOSFET and Schottky Die -2.3 AMPERES, -20 VOLTS Allowing for Flexibility in Application ... See More ⇒

 9.1. Size:202K  onsemi
 ntmsd3p303r2-d.pdf pdf_icon

NTMSD2P102LR2

NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), MOSFET Schottky Diode with Low VF -3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die -30 VOLTS Allowing for Flexibility in Application Use... See More ⇒

 9.2. Size:222K  onsemi
 ntmsd6n303r2-d ntmsd6n303r2.pdf pdf_icon

NTMSD2P102LR2

NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs http //onsemi.com packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a MOSFET space saving configuration. Independent pinouts for MOSFET and 6.0 AMPERES Schottky die allow the flexibi... See More ⇒

 9.3. Size:118K  onsemi
 ntmsd3p102r2-d ntmsd3p102r2.pdf pdf_icon

NTMSD2P102LR2

NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF MOSFET Independent Pin-Outs for MOSFET and Schottky Die -3.05 AMPERES Allowing for Flexibility in Application Use -20 VOLT... See More ⇒

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Detailed specifications: NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G , NTMS5P02R2G , NTMS5P02R2SG , NTMS7N03R2G , 75N75 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , NTNUS3171PZT5G , NTP125N02RG .

History: DMG7702SFG | IXFN100N50Q3

Keywords - NTMSD2P102LR2 MOSFET specs

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