NTMSD3P102R2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMSD3P102R2
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SO-8

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NTMSD3P102R2 Datasheet (PDF)

..1. Size:118K onsemi
ntmsd3p102r2-d ntmsd3p102r2.pdf

NTMSD3P102R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Packagehttp://onsemi.com High Density Power MOSFET with Low RDS(on),Schottky Diode with Low VFMOSFET Independent Pin-Outs for MOSFET and Schottky Die-3.05 AMPERESAllowing for Flexibility in Application Use-20 VOLT

7.1. Size:202K onsemi
ntmsd3p303r2-d.pdf

NTMSD3P303R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package http://onsemi.com High Density Power MOSFET with Low RDS(on),MOSFETSchottky Diode with Low VF-3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die-30 VOLTSAllowing for Flexibility in Application Use

9.1. Size:222K onsemi
ntmsd6n303r2-d ntmsd6n303r2.pdf

NTMSD6N303R2Power MOSFET6 Amps, 30 VoltsN-Channel SO-8 FETKYtThe FETKY product family incorporates low RDS(on) MOSFETshttp://onsemi.compackaged with an industry leading, low forward drop, low leakageSchottky Barrier rectifier to offer high efficiency components in aMOSFETspace saving configuration. Independent pinouts for MOSFET and6.0 AMPERESSchottky die allow the flexibi

9.2. Size:95K onsemi
ntmsd2p102lr2.pdf

NTMSD2P102LR2FETKYPower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package High Density Power MOSFET with Low RDS(on), http://onsemi.comSchottky Diode with Low VF Logic Level Gate DriveMOSFET Independent Pin-Outs for MOSFET and Schottky Die -2.3 AMPERES, -20 VOLTSAllowing for Flexibility in Application

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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