NTMSD3P102R2 Datasheet. Specs and Replacement

Type Designator: NTMSD3P102R2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SO-8

NTMSD3P102R2 substitution

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NTMSD3P102R2 datasheet

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NTMSD3P102R2

NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF MOSFET Independent Pin-Outs for MOSFET and Schottky Die -3.05 AMPERES Allowing for Flexibility in Application Use -20 VOLT... See More ⇒

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NTMSD3P102R2

NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), MOSFET Schottky Diode with Low VF -3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die -30 VOLTS Allowing for Flexibility in Application Use... See More ⇒

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NTMSD3P102R2

NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs http //onsemi.com packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a MOSFET space saving configuration. Independent pinouts for MOSFET and 6.0 AMPERES Schottky die allow the flexibi... See More ⇒

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NTMSD3P102R2

NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package High Density Power MOSFET with Low RDS(on), http //onsemi.com Schottky Diode with Low VF Logic Level Gate Drive MOSFET Independent Pin-Outs for MOSFET and Schottky Die -2.3 AMPERES, -20 VOLTS Allowing for Flexibility in Application ... See More ⇒

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Detailed specifications: NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, NTMS5P02R2G, NTMS5P02R2SG, NTMS7N03R2G, NTMSD2P102LR2, AO3400A, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ, NTNS3A91PZ, NTNUS3171PZT5G, NTP125N02RG, NTP13N10

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