NTR1P02L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02L
Código: P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.25 VQgⓘ - Carga de la puerta: 3.1 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET NTR1P02L
NTR1P02L Datasheet (PDF)
ntr1p02l nvtr01p02l.pdf
NTR1P02L, NVTR01P02LPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 PackageThese miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalV(BR)DSS RDS(on) Max ID Maxapplications are DC-DC converters and power management inportable and battery-
ntr1p02l nvtr01p02l.pdf
Product specificationNTR1P02L, NVTR01P02LPower MOSFETV(BR)DSS RDS(on) Max ID Max-20 V, -1.3 A, P-Channel -20 V 220 mW @ -4.5 V -1.3 ASOT-23 PackageP-ChannelThese miniature surface mount MOSFETs low RDS(on) assure Dminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalapplications are DC-DC converters
ntr1p02lt1 ntr1p02lt1h.pdf
NTR1P02LT1,NTR1P02LT1HPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 Packagehttp://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Maxfor use in space sensitive power management circuitry. Typical-20 V 220 mW -1.3 Aapplications are DC-DC converters and power management i
ntr1p02lt1.pdf
SMD Type MOSFETP-Channel MOSFETNTR1P02LT1 (KTR1P02LT1)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-20V ID =-1.3 A1 2 RDS(ON) 220m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 350m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
ntr1p02t1-d.pdf
NTR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyhttp://onsemi.comand Extends Battery LifeRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products-20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P
ntr1p02t1 ntr1p02t3.pdf
NTR1P02T1, NVR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifehttp://onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board
ntr1p02 nvr1p02.pdf
NTR1P02, NVR1P02Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifewww.onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PMV28ENEA | FSJ264R | IRFSL11N50APBF
History: PMV28ENEA | FSJ264R | IRFSL11N50APBF
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