NTR1P02L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de NTR1P02L MOSFET
Principales características: NTR1P02L
ntr1p02l nvtr01p02l.pdf
NTR1P02L, NVTR01P02L Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical V(BR)DSS RDS(on) Max ID Max applications are DC-DC converters and power management in portable and battery-
ntr1p02l nvtr01p02l.pdf
Product specification NTR1P02L, NVTR01P02L Power MOSFET V(BR)DSS RDS(on) Max ID Max -20 V, -1.3 A, P-Channel -20 V 220 mW @ -4.5 V -1.3 A SOT-23 Package P-Channel These miniature surface mount MOSFETs low RDS(on) assure D minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC-DC converters
ntr1p02lt1 ntr1p02lt1h.pdf
NTR1P02LT1, NTR1P02LT1H Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package http //onsemi.com These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Max for use in space sensitive power management circuitry. Typical -20 V 220 mW -1.3 A applications are DC-DC converters and power management i
ntr1p02lt1.pdf
SMD Type MOSFET P-Channel MOSFET NTR1P02LT1 (KTR1P02LT1) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-20V ID =-1.3 A 1 2 RDS(ON) 220m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 350m (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
Otros transistores... NTP75N06 , NTP75N06L , NTP85N03 , NTP8G202N , NTP8G206N , NTP90N02 , NTQS6463R2 , NTR0202PLT1 , IRF630 , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , NTR3A30PZ , NTR4003NT1G , NTR4101PT1G .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP3100A | AP30P06K | AP30P06 | AP30N04K | AP30N03K | AP30H80K | AP30H60K | AP30H220G | AP30H180K | AP30H150Q | AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S
Popular searches
irf 830 | mpsa56 transistor | transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516

