NTR4101PT1G Todos los transistores

 

NTR4101PT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTR4101PT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.6 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de NTR4101PT1G MOSFET

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Principales características: NTR4101PT1G

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NTR4101PT1G

NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http //onsemi.com http //onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @

 6.1. Size:108K  onsemi
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NTR4101PT1G

NTR4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http //onsemi.com http //onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @ -4.5 V -20 V Load/Power Management for Portables 90 mW @ -2.5

 6.2. Size:78K  onsemi
 ntr4101p ntrv4101p.pdf pdf_icon

NTR4101PT1G

NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive www.onsemi.com www.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(ON) TYP ID MAX

 6.3. Size:120K  tysemi
 ntr4101p ntrv4101p.pdf pdf_icon

NTR4101PT1G

Product specification NTR4101P, NTRV4101P Trench Power MOSFET V(BR)DSS RDS(ON) TYP ID MAX -20 V, Single P-Channel, SOT-23 70 mW @ -4.5 V Features -20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on) 112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint P-Channel MOSFET NTRV Prefix for Automotive and Other Applic

MOSTRAR MÁS

Otros transistores... NTR1P02L , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , NTR3A30PZ , NTR4003NT1G , IRLB4132 , NTR4170NT1G , NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , NTR4503NT1 , NTR5103N , NTR5105P , NTR5198NL .

 

 
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