NTR4101PT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR4101PT1G
Código: TR4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 7.5 nC
trⓘ - Tiempo de subida: 12.6 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET NTR4101PT1G
NTR4101PT1G Datasheet (PDF)
ntr4101pt1g.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @
ntr4101p.pdf
NTR4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @ -4.5 V-20 V Load/Power Management for Portables 90 mW @ -2.5
ntr4101p ntrv4101p.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX
ntr4101p ntrv4101p.pdf
Product specificationNTR4101P, NTRV4101PTrench Power MOSFETV(BR)DSS RDS(ON) TYP ID MAX-20 V, Single P-Channel, SOT-2370 mW @ -4.5 VFeatures-20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on)112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small FootprintP-Channel MOSFET NTRV Prefix for Automotive and Other Applic
ntr4101p.pdf
SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 120m (VGS =-2.5V) RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Ratings Ta =
ntr4101p-3.pdf
SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 120m (VGS =-2.5V) 1.9 -0.2 RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Rating
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Liste
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