Справочник MOSFET. NTR4101PT1G

 

NTR4101PT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTR4101PT1G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12.6 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для NTR4101PT1G

 

 

NTR4101PT1G Datasheet (PDF)

 ..1. Size:156K  onsemi
 ntr4101pt1g.pdf

NTR4101PT1G NTR4101PT1G

NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @

 6.1. Size:108K  onsemi
 ntr4101p.pdf

NTR4101PT1G NTR4101PT1G

NTR4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @ -4.5 V-20 V Load/Power Management for Portables 90 mW @ -2.5

 6.2. Size:78K  onsemi
 ntr4101p ntrv4101p.pdf

NTR4101PT1G NTR4101PT1G

NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX

 6.3. Size:120K  tysemi
 ntr4101p ntrv4101p.pdf

NTR4101PT1G NTR4101PT1G

Product specificationNTR4101P, NTRV4101PTrench Power MOSFETV(BR)DSS RDS(ON) TYP ID MAX-20 V, Single P-Channel, SOT-2370 mW @ -4.5 VFeatures-20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on)112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small FootprintP-Channel MOSFET NTRV Prefix for Automotive and Other Applic

 6.4. Size:1721K  kexin
 ntr4101p.pdf

NTR4101PT1G NTR4101PT1G

SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 120m (VGS =-2.5V) RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Ratings Ta =

 6.5. Size:1732K  kexin
 ntr4101p-3.pdf

NTR4101PT1G NTR4101PT1G

SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 120m (VGS =-2.5V) 1.9 -0.2 RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Rating

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