NTR4501NT1 Todos los transistores

 

NTR4501NT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTR4501NT1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

NTR4501NT1 Datasheet (PDF)

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NTR4501NT1

NTR4501N, NSTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint V(BR)DSS RDS(on) Typ ID Max(Note 1) NSTR Prefix for Automotive and Other Applications Requiring70 mW @ 4.5 V 3.6 AUnique Site

 6.1. Size:192K  onsemi
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NTR4501NT1

NTR4501N, NVR4501NMOSFET Power, Single,N-Channel, SOT-2320 V, 3.2 AFeatureswww.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max(Note 1) SOT-23 Surface Mount for Small Footprint70 mW @ 4.5 V 3.6 A NVR Prefix for Automotive and Other Applications Requiring20 VUniqu

 6.2. Size:105K  onsemi
ntr4501n.pdf pdf_icon

NTR4501NT1

NTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint(Note 1) Pb-Free Packages are Available70 mW @ 4.5 V 3.6 A20 VApplications88 mW @ 2.5 V 3.1 A Load/P

 6.3. Size:73K  tysemi
ntr4501n.pdf pdf_icon

NTR4501NT1

Product specificationNTR4501NPower MOSFETV(BR)DSS RDS(on) TYP ID MAX(Note 1)20 V, 3.2 A, Single N-Channel, SOT-2370 mW @ 4.5 V 3.6 A20 V85 mW @ 2.5 V 3.1 AFeatures Leading Planar Technology for Low Gate Charge / Fast SwitchingN-Channel 2.5 V Rated for Low Voltage Gate DriveD SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableApplicat

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SIHFIB6N60A | 4N65KL-TN3-R | CMT04N60GN252 | PJS6416 | CHM1024VGP | IRHMK57260SE | 2SK1152L

 

 
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