NTR4503NT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR4503NT1 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 52 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: SOT-23
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NTR4503NT1 datasheet
ntr4503nt1.pdf
NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) http //onsemi.com AEC Q101 Qualified - NVTR4503N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX Applic
ntr4503nt1g.pdf
NTR4503NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)
ntr4503n.pdf
NTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive http //onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) These are Pb-Free Devices V(BR)DSS RDS(on) TYP ID MAX 85 mW @ 10 V Applications 30 V 2.5 A DC-DC Conversion 105 mW @ 4.5 V
ntr4503n nvtr4503n.pdf
NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive www.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) TYP ID MAX Site and Control Change Requi
Otros transistores... NTR3162PT1G, NTR3A30PZ, NTR4003NT1G, NTR4101PT1G, NTR4170NT1G, NTR4171PT1G, NTR4501NT1, NTR4502PT1, IRFP260, NTR5103N, NTR5105P, NTR5198NL, NTRV4101P, NTS2101PT1, NTS4001NT1, NTS4101PT1, NTS4172NT1G
Parámetros del MOSFET. Cómo se afectan entre sí.
History: CES2316 | APG054N10D
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