NTR4503NT1 - Аналоги. Основные параметры
Наименование производителя: NTR4503NT1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5.8 ns
Cossⓘ - Выходная емкость: 52 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: SOT-23
Аналог (замена) для NTR4503NT1
NTR4503NT1 технические параметры
ntr4503nt1.pdf
NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) http //onsemi.com AEC Q101 Qualified - NVTR4503N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX Applic
ntr4503nt1g.pdf
NTR4503NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)
ntr4503n.pdf
NTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive http //onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) These are Pb-Free Devices V(BR)DSS RDS(on) TYP ID MAX 85 mW @ 10 V Applications 30 V 2.5 A DC-DC Conversion 105 mW @ 4.5 V
ntr4503n nvtr4503n.pdf
NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive www.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) TYP ID MAX Site and Control Change Requi
Другие MOSFET... NTR3162PT1G , NTR3A30PZ , NTR4003NT1G , NTR4101PT1G , NTR4170NT1G , NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , SPP20N60C3 , NTR5103N , NTR5105P , NTR5198NL , NTRV4101P , NTS2101PT1 , NTS4001NT1 , NTS4101PT1 , NTS4172NT1G .
Список транзисторов
Обновления
MOSFET: AP3N50K | AP3N50F | AP3912GD | AP3415E | AP3404S | AP3404 | AP3205 | AP3139 | AP3134N5 | AP3101A | AP3100A | AP30P06K | AP30P06 | AP30N04K | AP30N03K | AP30H80K
Popular searches
2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b






