NTR4503NT1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTR4503NT1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5.8 ns
Cossⓘ - Выходная емкость: 52 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: SOT-23
- подбор MOSFET транзистора по параметрам
NTR4503NT1 Datasheet (PDF)
ntr4503nt1.pdf

NTR4503N, NVTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm)http://onsemi.com AEC Q101 Qualified - NVTR4503N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXApplic
ntr4503nt1g.pdf

NTR4503NT1Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
ntr4503n.pdf

NTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drivehttp://onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) These are Pb-Free DevicesV(BR)DSS RDS(on) TYP ID MAX85 mW @ 10 VApplications30 V 2.5 A DC-DC Conversion105 mW @ 4.5 V
ntr4503n nvtr4503n.pdf

NTR4503N, NVTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drivewww.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) TYP ID MAXSite and Control Change Requi
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PH2925U | SIHG47N60S | FDMS3624S | HGI110N08AL | SQ2319ADS | IRF140 | 9N95
History: PH2925U | SIHG47N60S | FDMS3624S | HGI110N08AL | SQ2319ADS | IRF140 | 9N95



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