NTS4173PT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTS4173PT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SC-70

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NTS4173PT1G Datasheet (PDF)

..1. Size:108K onsemi
nts4173pt1g.pdf

NTS4173PPower MOSFET-30 V, -1.3 A, Single P-Channel, SC-70Features -30 V BVds, Low RDS(on) in SC-70 Package Low Threshold Voltagehttp://onsemi.com Fast Switching Speed This is a Halide-Free DeviceV(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device150 mW @ -10 V -1.2 AApplications-30 V 200 mW @ -4.5 V -1.0 A Load Switch280 mW @ -2.5 V -0.9 A

8.1. Size:102K onsemi
nts4172n nts4172nt1g.pdf

NTS4172NPower MOSFET30 V, 1.7 A, Single N-Channel, SC-70Features Low On-Resistance Low Gate Threshold Voltagehttp://onsemi.com Halide Free This is a Pb-Free DeviceV(BR)DSS RDS(on) MAX ID MAX93 mW @ 10 V 1.7 AApplications Low Side Load Switch30 V 100 mW @ 4.5 V 1.5 A DC-DC Converters (Buck and Boost Circuits)140 mW @ 2.5 V 1.0 A Optimized for

9.1. Size:100K onsemi
nts4101p.pdf

NTS4101PPower MOSFET-20 V, -1.37 A, Single P-Channel, SC-70Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm)83 mW @ -4.5 V Pb-Free Package is Available-20 V88 mW @ -3.6 V -1.37 AApplications High Side Load Switch 104 mW @ -2.5

9.2. Size:96K onsemi
nts4101pt1.pdf

9.3. Size:838K cn vbsemi
nts4101pt1g.pdf

NTS4101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

9.4. Size:2471K cn tech public
tpnts4101pt1g.pdf

TPNTS4 1 01 PT1 GP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPNTS4101PT1G 3000 7DSGSOT-323Absolute Maximum Ratings (TA=

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