All MOSFET. NTS4173PT1G Datasheet

 

NTS4173PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTS4173PT1G
   Marking Code: TG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SC-70

 NTS4173PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTS4173PT1G Datasheet (PDF)

 ..1. Size:108K  onsemi
 nts4173pt1g.pdf

NTS4173PT1G NTS4173PT1G

NTS4173PPower MOSFET-30 V, -1.3 A, Single P-Channel, SC-70Features -30 V BVds, Low RDS(on) in SC-70 Package Low Threshold Voltagehttp://onsemi.com Fast Switching Speed This is a Halide-Free DeviceV(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device150 mW @ -10 V -1.2 AApplications-30 V 200 mW @ -4.5 V -1.0 A Load Switch280 mW @ -2.5 V -0.9 A

 8.1. Size:102K  onsemi
 nts4172n nts4172nt1g.pdf

NTS4173PT1G NTS4173PT1G

NTS4172NPower MOSFET30 V, 1.7 A, Single N-Channel, SC-70Features Low On-Resistance Low Gate Threshold Voltagehttp://onsemi.com Halide Free This is a Pb-Free DeviceV(BR)DSS RDS(on) MAX ID MAX93 mW @ 10 V 1.7 AApplications Low Side Load Switch30 V 100 mW @ 4.5 V 1.5 A DC-DC Converters (Buck and Boost Circuits)140 mW @ 2.5 V 1.0 A Optimized for

 9.1. Size:100K  onsemi
 nts4101p.pdf

NTS4173PT1G NTS4173PT1G

NTS4101PPower MOSFET-20 V, -1.37 A, Single P-Channel, SC-70Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm)83 mW @ -4.5 V Pb-Free Package is Available-20 V88 mW @ -3.6 V -1.37 AApplications High Side Load Switch 104 mW @ -2.5

 9.2. Size:96K  onsemi
 nts4101pt1.pdf

NTS4173PT1G NTS4173PT1G

NTS4101PPower MOSFET-20 V, -1.37 A, Single P-Channel, SC-70Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm)83 mW @ -4.5 V Pb-Free Package is Available-20 V88 mW @ -3.6 V -1.37 AApplications High Side Load Switch 104 mW @ -2.5

 9.3. Size:838K  cn vbsemi
 nts4101pt1g.pdf

NTS4173PT1G NTS4173PT1G

NTS4101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

 9.4. Size:2471K  cn tech public
 tpnts4101pt1g.pdf

NTS4173PT1G NTS4173PT1G

TPNTS4 1 01 PT1 GP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPNTS4101PT1G 3000 7DSGSOT-323Absolute Maximum Ratings (TA=

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