NTTFS4823NTAG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS4823NTAG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: WDFN8

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NTTFS4823NTAG datasheet

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 nttfs4823ntag.pdf pdf_icon

NTTFS4823NTAG

NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @

 4.1. Size:105K  onsemi
 nttfs4823n.pdf pdf_icon

NTTFS4823NTAG

NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @

 6.1. Size:105K  onsemi
 nttfs4824n.pdf pdf_icon

NTTFS4823NTAG

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

 6.2. Size:106K  onsemi
 nttfs4824ntag.pdf pdf_icon

NTTFS4823NTAG

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

MOSTRAR MÁS

Otros transistores... NTS4101PT1, NTS4172NT1G, NTS4173PT1G, NTS4409N, NTTD4401FR2, NTTFS3A08PZ, NTTFS3A08PZTAG, NTTFS4821NTAG, NCEP15T14, NTTFS4824NTAG, NTTFS4928NTAG, NTTFS4929NTAG, NTTFS4930NTAG, NTTFS4932NTAG, NTTFS4937NTAG, NTTFS4939NTAG, NTTFS4941NTAG