Справочник MOSFET. NTTFS4823NTAG

 

NTTFS4823NTAG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTTFS4823NTAG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 175 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: WDFN8

 Аналог (замена) для NTTFS4823NTAG

 

 

NTTFS4823NTAG Datasheet (PDF)

 ..1. Size:106K  onsemi
 nttfs4823ntag.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @

 4.1. Size:105K  onsemi
 nttfs4823n.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @

 6.1. Size:105K  onsemi
 nttfs4824n.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4

 6.2. Size:106K  onsemi
 nttfs4824ntag.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4

 6.3. Size:106K  onsemi
 nttfs4821ntag.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @

 6.4. Size:105K  onsemi
 nttfs4821n.pdf

NTTFS4823NTAG NTTFS4823NTAG

NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @

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