NTTFS4932NTAG Todos los transistores

 

NTTFS4932NTAG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS4932NTAG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.6 nS

Cossⓘ - Capacitancia de salida: 1064 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: WDFN8

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NTTFS4932NTAG datasheet

 ..1. Size:113K  onsemi
nttfs4932ntag.pdf pdf_icon

NTTFS4932NTAG

NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S

 4.1. Size:195K  onsemi
nttfs4932n.pdf pdf_icon

NTTFS4932NTAG

NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A

 4.2. Size:112K  onsemi
nttfs4932n-d.pdf pdf_icon

NTTFS4932NTAG

NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S

 6.1. Size:127K  onsemi
nttfs4930n.pdf pdf_icon

NTTFS4932NTAG

NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC

Otros transistores... NTTFS3A08PZ , NTTFS3A08PZTAG , NTTFS4821NTAG , NTTFS4823NTAG , NTTFS4824NTAG , NTTFS4928NTAG , NTTFS4929NTAG , NTTFS4930NTAG , IRFP250 , NTTFS4937NTAG , NTTFS4939NTAG , NTTFS4941NTAG , NTTFS4985NF , NTTFS4C05N , NTTFS4C06N , NTTFS4C08N , NTTFS4C10N .

History: APQ02SN65AF | 2SK1310 | AGM60P30D | CM9N90PZ

 

 

 

 

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