NTTFS4985NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4985NF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.47 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 876 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: WDFN8
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NTTFS4985NF datasheet
..1. Size:116K onsemi
nttfs4985nf.pdf 
NTTFS4985NF Power MOSFET 30 V, 64 A, Single N-Channel, WDFN8 Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.5 mW @ 10 V 30 V 64 A Applications
7.1. Size:128K 1
nttfs4928ntag.pdf
NTTFS4928N MOSFET Power, Single, N-Channel, m8FL 30 V, 37 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses 9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 37 A Compliant 13.5 mW @ 4.5 V
7.2. Size:195K onsemi
nttfs4932n.pdf
NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A
7.3. Size:113K onsemi
nttfs4932ntag.pdf
NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S
7.4. Size:116K onsemi
nttfs4929ntag.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
7.5. Size:127K onsemi
nttfs4930n.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
7.6. Size:111K onsemi
nttfs4939n-d.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
7.7. Size:111K onsemi
nttfs4941n.pdf
NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S
7.8. Size:122K onsemi
nttfs4928n.pdf
NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @
7.9. Size:112K onsemi
nttfs4941ntag.pdf
NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S
7.10. Size:194K onsemi
nttfs4937n.pdf
NTTFS4937N MOSFET Power, Single, N-Channel, m8FL 30 V, 75 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.5 mW @ 10 V 30 V 75 A Compliant 7.0 mW @ 4.5 V A
7.11. Size:193K onsemi
nttfs4939n.pdf
NTTFS4939N MOSFET Power, Single, N-Channel, m8FL 30 V, 52 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V 30 V 52 A Compliant 8.0 mW @ 4.5 V A
7.12. Size:111K onsemi
nttfs4928ntag.pdf
NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @
7.13. Size:111K onsemi
nttfs4939ntag.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
7.14. Size:111K onsemi
nttfs4943n-d.pdf
NTTFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 7.2 mW @ 10 V 30 V 41 A DC-DC
7.15. Size:127K onsemi
nttfs4929n.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
7.16. Size:116K onsemi
nttfs4930ntag.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
7.17. Size:109K onsemi
nttfs4945n.pdf
NTTFS4945N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 34 A Power
7.18. Size:112K onsemi
nttfs4932n-d.pdf
NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S
7.19. Size:111K onsemi
nttfs4937n-d.pdf
NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S
7.20. Size:112K onsemi
nttfs4937ntag.pdf
NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S
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