NTTFS4985NF
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTTFS4985NF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.47
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16.3
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 24
ns
Cossⓘ - Выходная емкость: 876
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035
Ohm
Тип корпуса:
WDFN8
- подбор MOSFET транзистора по параметрам
NTTFS4985NF
Datasheet (PDF)
..1. Size:116K onsemi
nttfs4985nf.pdf 
NTTFS4985NFPower MOSFET30 V, 64 A, Single N-Channel, WDFN8Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.5 mW @ 10 V30 V 64 AApplications
7.1. Size:128K 1
nttfs4928ntag.pdf 
NTTFS4928NMOSFET Power, Single,N-Channel, m8FL30 V, 37 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS30 V 37 ACompliant13.5 mW @ 4.5 V
7.2. Size:195K onsemi
nttfs4932n.pdf 
NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA
7.3. Size:113K onsemi
nttfs4932ntag.pdf 
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
7.4. Size:116K onsemi
nttfs4929ntag.pdf 
NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
7.5. Size:127K onsemi
nttfs4930n.pdf 
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
7.6. Size:111K onsemi
nttfs4939n-d.pdf 
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
7.7. Size:111K onsemi
nttfs4941n.pdf 
NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S
7.8. Size:122K onsemi
nttfs4928n.pdf 
NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @
7.9. Size:112K onsemi
nttfs4941ntag.pdf 
NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S
7.10. Size:194K onsemi
nttfs4937n.pdf 
NTTFS4937NMOSFET Power, Single,N-Channel, m8FL30 V, 75 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.5 mW @ 10 V30 V 75 ACompliant7.0 mW @ 4.5 VA
7.11. Size:193K onsemi
nttfs4939n.pdf 
NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA
7.12. Size:111K onsemi
nttfs4928ntag.pdf 
NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @
7.13. Size:111K onsemi
nttfs4939ntag.pdf 
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
7.14. Size:111K onsemi
nttfs4943n-d.pdf 
NTTFS4943NPower MOSFET30 V, 41 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications7.2 mW @ 10 V30 V 41 A DC-DC
7.15. Size:127K onsemi
nttfs4929n.pdf 
NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
7.16. Size:116K onsemi
nttfs4930ntag.pdf 
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
7.17. Size:109K onsemi
nttfs4945n.pdf 
NTTFS4945NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 34 A Power
7.18. Size:112K onsemi
nttfs4932n-d.pdf 
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
7.19. Size:111K onsemi
nttfs4937n-d.pdf 
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
7.20. Size:112K onsemi
nttfs4937ntag.pdf 
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
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