NTTFS5116PLTAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS5116PLTAG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 127 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de MOSFET NTTFS5116PLTAG
NTTFS5116PLTAG Datasheet (PDF)
nttfs5116pltag.pdf
NTTFS5116PLMOSFET Power-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchingwww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXApplications52 mW @ -10 V Load Switches-60 V -20 A DC Motor Control72 mW @ -4.5 V DC-DC ConversionP-Channel MOSFETMAXIMUM RATINGS (TJ = 25C unless otherwise stated)D (5-8
nttfs5116pltag.pdf
NTTFS5116PLPower MOSFET-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchinghttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantApplications V(BR)DSS RDS(on) MAX ID MAX Load Switches52 mW @ -10 V DC Motor Control -60 V -20 A72 mW @ -4.5 V DC-DC ConversionMAXIMUM RATINGS (TJ = 25C unless otherwise stated)P-Channel MOSFETParameter
nttfs5116pl-d.pdf
NTTFS5116PLPower MOSFET-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchinghttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantApplications V(BR)DSS RDS(on) MAX ID MAX Load Switches52 mW @ -10 V DC Motor Control -60 V -20 A72 mW @ -4.5 V DC-DC ConversionMAXIMUM RATINGS (TJ = 25C unless otherwise stated)P-Channel MOSFETParameter
nttfs5116pl.pdf
NTTFS5116PLMOSFET Power-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchingwww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXApplications52 mW @ -10 V Load Switches-60 V -20 A DC Motor Control72 mW @ -4.5 V DC-DC ConversionP-Channel MOSFETMAXIMUM RATINGS (TJ = 25C unless otherwise stated)D (5-8
nttfs5820nltag.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
nttfs5c454nltag.pdf
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nttfs5826nltag.pdf
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nttfs5c670nl.pdf
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nttfs5d1n06hl.pdf
MOSFET - Power,N-Channel, Shielded Gate60 V, 5.2 mW, 78 ANTTFS5D1N06HLGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced MOSFET process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateELECTRICAL CONNECTIONresistance and yet maintain superior switching performance with bestin c
nttfs5820nltag.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
nttfs5c658nl.pdf
NTTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX5.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V
nttfs5826nl.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5c478nl.pdf
MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANTTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX14 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40
nttfs5c454nl.pdf
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nttfs5c471nl.pdf
MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANTTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V40 V 41 A15.5 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25
nttfs5811nl.pdf
NTTFS5811NLPower MOSFET40 V, 53 A, 6.4 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.7 mW @ 10 V40 V 53 A10 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 40
nttfs5cs70nl.pdf
NTTFS5CS70NLPower MOSFET60 V, 6.5 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwi
nttfs5c680nl.pdf
NTTFS5C680NLMOSFET - Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX26.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 6
nttfs5c673nl.pdf
NTTFS5C673NLPower MOSFET60 V, 9.3 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX9.3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C u
nttfs5820nl.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
nttfs5826nl-d.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5c466nl.pdf
MOSFET Power, Single,N-Channel40 V, 7.3 mW, 51 ANTTFS5C466NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant7.3 mW @ 10 V40 V 51 AMAXIMUM RATINGS (TJ = 25C unless otherw
nttfs5c460nl.pdf
NTTFS5C460NLMOSFET Power, Single,N-Channel40 V, 4.8 mW, 74 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.8 mW @ 10 V40 V 74 AMAXIMUM RATINGS (TJ = 25C unless otherw
nttfs5811nltag.pdf
NTTFS5811NLPower MOSFET40 V, 53 A, 6.4 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.7 mW @ 10 V40 V 53 A10 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 40
nttfs5826nltag.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5c453nl.pdf
NTTFS5C453NLPower MOSFET40 V, 3 mW, 107 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unle
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RQJ0303PGDQA
History: RQJ0303PGDQA
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