NTTFS5116PLTAG Specs and Replacement
Type Designator: NTTFS5116PLTAG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ -
Output Capacitance: 127 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: WDFN8
NTTFS5116PLTAG substitution
- MOSFET ⓘ Cross-Reference Search
NTTFS5116PLTAG datasheet
..1. Size:124K 1
nttfs5116pltag.pdf 
NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8... See More ⇒
..2. Size:107K onsemi
nttfs5116pltag.pdf
NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter... See More ⇒
3.1. Size:111K onsemi
nttfs5116pl-d.pdf
NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter... See More ⇒
3.2. Size:124K onsemi
nttfs5116pl.pdf
NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8... See More ⇒
8.1. Size:107K 1
nttfs5820nltag.pdf
NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS ... See More ⇒
8.2. Size:76K 1
nttfs5c454nltag.pdf
NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C... See More ⇒
8.3. Size:108K 1
nttfs5826nltag.pdf
NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V ... See More ⇒
8.4. Size:147K onsemi
nttfs5c670nl.pdf
NTTFS5C670NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi... See More ⇒
8.5. Size:298K onsemi
nttfs5d1n06hl.pdf
MOSFET - Power, N-Channel, Shielded Gate 60 V, 5.2 mW, 78 A NTTFS5D1N06HL General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in c... See More ⇒
8.6. Size:107K onsemi
nttfs5820nltag.pdf
NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS ... See More ⇒
8.7. Size:139K onsemi
nttfs5c658nl.pdf
NTTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 5.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V... See More ⇒
8.8. Size:108K onsemi
nttfs5826nl.pdf
NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V ... See More ⇒
8.9. Size:199K onsemi
nttfs5c478nl.pdf
MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NTTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 14 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40... See More ⇒
8.10. Size:76K onsemi
nttfs5c454nl.pdf
NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C... See More ⇒
8.12. Size:111K onsemi
nttfs5811nl.pdf
NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40... See More ⇒
8.13. Size:100K onsemi
nttfs5cs70nl.pdf
NTTFS5CS70NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi... See More ⇒
8.14. Size:143K onsemi
nttfs5c680nl.pdf
NTTFS5C680NL MOSFET - Power, Single N-Channel 60 V, 26.5 mW, 20 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 26.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6... See More ⇒
8.15. Size:144K onsemi
nttfs5c673nl.pdf
NTTFS5C673NL Power MOSFET 60 V, 9.3 mW, 50 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 9.3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C u... See More ⇒
8.16. Size:110K onsemi
nttfs5820nl.pdf
NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS ... See More ⇒
8.17. Size:111K onsemi
nttfs5826nl-d.pdf
NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V ... See More ⇒
8.18. Size:118K onsemi
nttfs5c466nl.pdf
MOSFET Power, Single, N-Channel 40 V, 7.3 mW, 51 A NTTFS5C466NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 7.3 mW @ 10 V 40 V 51 A MAXIMUM RATINGS (TJ = 25 C unless otherw... See More ⇒
8.19. Size:200K onsemi
nttfs5c460nl.pdf
NTTFS5C460NL MOSFET Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.8 mW @ 10 V 40 V 74 A MAXIMUM RATINGS (TJ = 25 C unless otherw... See More ⇒
8.20. Size:107K onsemi
nttfs5811nltag.pdf
NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40... See More ⇒
8.21. Size:108K onsemi
nttfs5826nltag.pdf
NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V ... See More ⇒
8.22. Size:144K onsemi
nttfs5c453nl.pdf
NTTFS5C453NL Power MOSFET 40 V, 3 mW, 107 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unle... See More ⇒
Detailed specifications: NTTFS4C06N, NTTFS4C08N, NTTFS4C10N, NTTFS4C13N, NTTFS4C25N, NTTFS4H05N, NTTFS4H05NTAG, NTTFS4H07N, 2N60, NTTFS5811NLTAG, NTTFS5820NLTAG, NTTFS5826NLTAG, NTTS2P02R2, NTTS2P03R2, NTY100N10, NTZD3154NT1G, NTZD3155CT1G
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