NTTFS5826NLTAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS5826NLTAG
Código: 5826
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 8.4 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de MOSFET NTTFS5826NLTAG
NTTFS5826NLTAG Datasheet (PDF)
nttfs5826nltag.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5826nltag.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5826nl.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5826nl-d.pdf
NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V
nttfs5820nltag.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
nttfs5820nltag.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
nttfs5820nl.pdf
NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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