NTTFS5826NLTAG - описание и поиск аналогов

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS