TP0610T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TP0610T
   Código: T0_T50
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
   Paquete / Cubierta: SOT23

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TP0610T Datasheet (PDF)

..1. Size:70K vishay
tp0610l tp0610t vp0610l vp0610t bs250.pdf

TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR

..2. Size:474K supertex
tp0610t.pdf

TP0610TP-Channel Enhancement ModeVertical DMOS FETsFeaturesGeneral Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven silicon-gate manufacturing process. This Ease of parallelingcombination produces a device with the

8.1. Size:45K 1
tp0610k.pdf

TP0610KNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA)60 6 @ VGS = 10 V 1 to 3.0 185FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Low On-Resistance: 6 D Low Offset (Error

8.2. Size:89K vishay
bs250kl-tr1-e3 tp0610kl bs250kl.pdf

TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper

8.3. Size:207K vishay
tp0610k.pdf

TP0610KVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 6 at VGS = - 10 V - 1 to - 3 - 185 High-Side Switching Low On-Resistance: 6 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.)TO-236

8.4. Size:898K cn vbsemi
tp0610k-t1.pdf

TP0610K-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo

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