TP0610T Todos los transistores

 

TP0610T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP0610T

Código: T50*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.36 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.4 V

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 30 pF

Resistencia drenaje-fuente RDS(on): 10 Ohm

Empaquetado / Estuche: SOT23

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TP0610T Datasheet (PDF)

1.1. tp0610t.pdf Size:43K _update_mosfet

TP0610T

Specification Comparison Vishay Siliconix TP0610K vs. TP0610T Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements TP0610K Replaces TP0610T TP0610K-E3 (Lead (Pb)-free version) Replaces TP0610T TP0610K-T1 Replaces TP0610T-T1 TP0610K-T1-E3 (Lead (Pb)-free Version) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter

1.2. tp0610t.pdf Size:474K _update-mosfet

TP0610T
TP0610T

TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s ► Low power drive requirement well-proven silicon-gate manufacturing process. This ► Ease of paralleling combination produces a device with the

 1.3. tp0610l tp0610t vp0610l vp0610t bs250.pdf Size:70K _vishay

TP0610T
TP0610T

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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