All MOSFET. TP0610T Datasheet


TP0610T MOSFET. Datasheet pdf. Equivalent

Type Designator: TP0610T

Marking Code: T50*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 0.12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 10 Ohm

Package: SOT23

TP0610T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TP0610T Datasheet (PDF)

1.1. tp0610t.pdf Size:43K _update_mosfet


Specification Comparison Vishay Siliconix TP0610K vs. TP0610T Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements TP0610K Replaces TP0610T TP0610K-E3 (Lead (Pb)-free version) Replaces TP0610T TP0610K-T1 Replaces TP0610T-T1 TP0610K-T1-E3 (Lead (Pb)-free Version) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter

1.2. tp0610t.pdf Size:474K _update-mosfet


TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s ► Low power drive requirement well-proven silicon-gate manufacturing process. This ► Ease of paralleling combination produces a device with the

 1.3. tp0610l tp0610t vp0610l vp0610t bs250.pdf Size:70K _vishay


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