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SMD Type IC SMD Type IC SMD Type IC SMD Type IC DIP Type MOSFET Product specification 40P03 TO-220 9.90 0.20 4.50 0.20 (8.70) Features +0.10 3.60 0.10 1.30 0.05 VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) 50m (V =-4.5V) DS(ON) GS R D 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP

CMP40P03 P-Ch -30V Fast Switching MOSFETs General Description Product Summery The CMP40P03 is a P-channel Power BVDSS RDSON ID MOSFET. It has specifically been designed to minimize input capacitance -30V 14m -40A and gate charge. The device is therefore suitable in advanced Applications high-efficiency switching applications. LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS

TK40P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P03M1 TK40P03M1 TK40P03M1 TK40P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 5.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.3 m (typ.) (VGS = 10

RSS040P03 Transistors Switching (-30V, -4.0A) RSS040P03 External dimensions (Unit mm) Features 1) Low On-resistance. SOP8 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0 Power switching, DC / DC converter. 0.4Min. Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq

4V Drive Pch MOSFET RRH140P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensions Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit

4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 Features (3) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). (1) (2) 3) 4V drive. Abbreviated symbol UG Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000

RRR040P03FRA Datasheet Pch -30V -4A Small Signal MOSFET lOutline l SOT-346T VDSS -30V SC-96 RDS(on)(Max.) 45m TSMT3 ID 4A PD 1.0W lInner circuit l lFeatures l 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified

4V Drive Pch MOSFET RRH040P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET SOP8 Features 1) Low Gate Charge. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (p

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

AP40P03GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

AP40P03GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications an

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP40P03 series are from Advanced Power innova

AP40P03GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

Analog Power AM40P03-34D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32 converters and power management in portable and -30 battery-powered produ

Analog Power AM40P03-20I P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 20 @ VGS = -10V -41 Low thermal impedance -30 35 @ VGS = -4.5V -31 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

Analog Power AM40P03-20D P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 20 @ VGS = -10V -41 Low thermal impedance -30 35 @ VGS = -4.5V -31 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

BRCS40P03DP Rev.C Mar.-2021 DATA SHEET / Descriptions P TO-252 P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on) Low RDS(on),High Current Capability. Halogen-free Product. / Applications / AC-in load switch,

BRCS40P03IP Rev.A Sep.-2022 DATA SHEET / Descriptions P TO-251 P-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R DS(on) Low R ,High Current Capability, HF Product. DS(on) / Applications / AC-in load switch,Battery p

BRCS140P03YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = -30V ID =-34 A (VGS = 20V) RDS(ON)@10V 14mR(Typ.12.8mR) HF Product. / Applications DC/DC

BR40P03 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 P MOS P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, High Current, High Speed switching, fast switching. / Applications LED DC/DC DC/AC LED Power C

SMD Type MOSFET P-Channel MOSFET RRH040P03 (KRH040P03) SOP-8 Unit mm Features VDS (V) =-30V ID =-4 A (VGS =-10V) 1.50 0.15 RDS(ON) 75m (VGS =-10V) RDS(ON) 115m (VGS =-4.5V) 1 Source 5 Drain RDS(ON) 125m (VGS =-4V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S D S D S D G D Absolute Maximum Ratings Ta = 25 Par

Bruckewell Technology Corp., Ltd. MSD40P03 P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards

SSM40P03GH,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Low gate-charge BV -30V DSS Simple drive requirement R 28m DS(ON) G Fast switching ID -30A S Description G The SSM40P03H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The throug

JMTP340P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -7A Load Switch RDS(ON)

JMTK340P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -20A Load Switch RDS(ON)

HTS140P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 12 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 17 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -12 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Pin2 Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms an

HTJ440P03 P-1 30V P-Ch Power MOSFET -30 V VDS Feature 32 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 39 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 60 RDS(on),typ VGS=2.5V m Lead Free, Halogen Free -4 A ID (Sillicon Limited) Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D

WSF40P03 P-Ch MOSFET General Description Product Summery The WSF40P03 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 18m -40A gate charge for most of the small power switching and load switch applications. Applications The WSF40P03 meet the RoHS and Green Product requirement with full fun

AP40P03GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A

AP40P03GJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To

VBZE40P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET

AM40P03-20D www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET

RRR040P03TL www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc

TTD40P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -40A Low Gate Charge RDS(ON) (at VGS =-10V)

AP40P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP40P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-40A DS D R