40P03 MOSFET. Datasheet pdf. Equivalent

SMD Type ICSMD Type ICSMD Type ICSMD Type ICDIP Type MOSFETProduct specification40P03TO-2209.90 0.20 4.50 0.20(8.70) Features+0.103.60 0.10 1.30 0.05 VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) 50m (V =-4.5V)DS(ON) GS R D 1.27 0.10 1.52 0.1021 30.80 0.10+0.100.50 0.05 2.40 0.202.54TYP 2.54TYP

CMP40P03P-Ch -30V Fast Switching MOSFETsGeneral Description Product SummeryThe CMP40P03 is a P-channel Power BVDSS RDSON ID MOSFET. It has specifically been designed to minimize input capacitance -30V 14m -40Aand gate charge. The device is therefore suitable in advanced Applications high-efficiency switching applications. LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS

TK40P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P03M1TK40P03M1TK40P03M1TK40P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 5.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.3 m (typ.) (VGS = 10

RSS040P03 Transistors Switching (-30V, -4.0A) RSS040P03 External dimensions (Unit : mm) Features 1) Low On-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0Power switching, DC / DC converter. 0.4Min.Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq

4V Drive Pch MOSFET RRH140P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Inner circuit Package Taping(8) (7) (6) (5)Type Code TBBasic ordering unit

4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) Space saving small surface mount package (TSMT3).(1) (2)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 3000

RRR040P03FRADatasheetPch -30V -4A Small Signal MOSFETlOutlinel SOT-346TVDSS-30V SC-96RDS(on)(Max.)45m TSMT3ID4APD1.0W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S Protection Diode3) Small Surface Mount Package (TSMT3)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualified

4V Drive Pch MOSFET RRH040P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8Features 1) Low Gate Charge. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit Package Taping(8) (7) (6) (5)Type Code TBBasic ordering unit (p

AP40P03GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

AP40P03GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt

AP40P03GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications an

AP40P03GI-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAP40P03 series are from Advanced Power innova

AP40P03GPRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resist

Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ

Analog Power AM40P03-20IP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

Analog Power AM40P03-20DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

BRCS40P03DP Rev.C Mar.-2021 DATA SHEET / Descriptions P TO-252 P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on)Low RDS(on),High Current Capability. Halogen-free Product. / Applications / AC-in load switch,

BRCS40P03IP Rev.A Sep.-2022 DATA SHEET / Descriptions PTO-251 P-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R DS(on)Low R ,High Current Capability, HF Product. DS(on) / Applications / AC-in load switch,Battery p

BRCS140P03YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID =-34 A (VGS = 20V) RDS(ON)@10V14mR(Typ.12.8mR) HFProduct. / Applications DC/DC

BR40P03 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 P MOS P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, High Current, High Speed switching, fast switching. / Applications LED DC/DC DC/AC LED Power C

SMD Type MOSFETP-Channel MOSFETRRH040P03 (KRH040P03)SOP-8 Unit:mm Features VDS (V) =-30V ID =-4 A (VGS =-10V)1.50 0.15 RDS(ON) 75m (VGS =-10V) RDS(ON) 115m (VGS =-4.5V)1 Source 5 Drain RDS(ON) 125m (VGS =-4V)6 Drain2 Source7 Drain3 Source8 Drain4 GateSDSDSD GD Absolute Maximum Ratings Ta = 25Par

Bruckewell Technology Corp., Ltd. MSD40P03 P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards

SSM40P03GH,JP-CHANNEL ENHANCEMENT-MODE POWER MOSFETDLow gate-charge BV -30VDSSSimple drive requirement R 28mDS(ON)GFast switching ID -30ASDescriptionGThe SSM40P03H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The throug

HTS140P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level12RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness17RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-12 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms an

HTJ440P03 P-130V P-Ch Power MOSFET-30 VVDSFeature32RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level39RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=2.5V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainD

WSF40P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF40P03 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and-30V 18m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF40P03 meet the RoHS and GreenProduct requirement with full fun

AP40P03GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA

AP40P03GJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo

VBZFB40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFET-30 VVDSFEATURES Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 18 mDefinitionRDS(on),typ VGS=4.5V 22 m TrenchFET Power MOSFETAID -35 100 % Rg TestedAPPLICATIONS Load SwitchTO-251 Battery SwitchSGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25

VBZE40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

AM40P03-20Dwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

RRR040P03TLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc

TTD40P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -40A Low Gate Charge RDS(ON) (at VGS =-10V)