50N06AF Todos los transistores

 ..1. Size:418K  nell
 50n06a 50n06af 50n06f 50n06g.pdf

RoHS 50N06 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION D The Nell 50N06 is a three-terminal silicon D device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. G S They are designed for use in applications

 8.1. Size:242K  feihonltd
 fhp50n06a.pdf

 8.2. Size:299K  feihonltd
 fhu50n06a fhd50n06a.pdf

 8.3. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 8.4. Size:368K  semihow
 hfp50n06a hfs50n06a.pdf

Oct 2016 HFP50N06A / HFS50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFP50N06A HFS50N06A Symbol TO-220 TO-220F S S

 8.5. Size:418K  semihow
 hfi50n06a hfw50n06a.pdf

Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S

 8.6. Size:1515K  cn shikues
 sk50n06a.pdf

SK50N06A 60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

 8.7. Size:564K  cn yangzhou yangjie elec
 yjp150n06aq.pdf

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

 8.8. Size:927K  cn hmsemi
 hm50n06a.pdf

HM50N06A N-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)