Справочник MOSFET. 50N06AF

 

50N06AF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 50N06AF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для 50N06AF

 

 

50N06AF Datasheet (PDF)

 ..1. Size:418K  nell
50n06a 50n06af 50n06f 50n06g.pdf

50N06AF
50N06AF

RoHS 50N06 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(50A, 60Volts)DESCRIPTIOND The Nell 50N06 is a three-terminal silicon Ddevice with current conduction capabilityof 50A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts.GS They are designed for use in applications

 8.1. Size:242K  feihonltd
fhp50n06a.pdf

50N06AF
50N06AF

 8.2. Size:299K  feihonltd
fhu50n06a fhd50n06a.pdf

50N06AF
50N06AF

 8.3. Size:1310K  matsuki electric
me50n06a me50n06a-g.pdf

50N06AF
50N06AF

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 8.4. Size:368K  semihow
hfp50n06a hfs50n06a.pdf

50N06AF
50N06AF

Oct 2016HFP50N06A / HFS50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFP50N06A HFS50N06ASymbolTO-220 TO-220FSS

 8.5. Size:418K  semihow
hfi50n06a hfw50n06a.pdf

50N06AF
50N06AF

Oct 2016HFI50N06A / HFW50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFI50N06A HFW50N06ASymbolTO-262 TO-263DS

 8.6. Size:1515K  cn shikues
sk50n06a.pdf

50N06AF
50N06AF

SK50N06A60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

 8.7. Size:564K  cn yangzhou yangjie elec
yjp150n06aq.pdf

50N06AF
50N06AF

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

 8.8. Size:927K  cn hmsemi
hm50n06a.pdf

50N06AF
50N06AF

HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

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