5N90AF Todos los transistores

 ..1. Size:372K  nell
 5n90a 5n90af.pdf

RoHS 5N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 900Volts) DESCRIPTION D The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G s

 9.1. Size:209K  1
 ssf5n90a.pdf

 9.2. Size:202K  1
 ssi5n90a ssw5n90a.pdf

 9.3. Size:625K  fairchild semi
 ssp5n90a.pdf

SSP5N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 9.4. Size:934K  samsung
 ssh5n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.5. Size:499K  samsung
 sss5n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.6. Size:856K  samsung
 ssp5n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.7. Size:609K  wuxi china
 cs5n90arh-g.pdf

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p