5N90AF MOSFET. Datasheet pdf. Equivalent
Type Designator: 5N90AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Rise Time (tr): 65 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO-220F
5N90AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5N90AF Datasheet (PDF)
0.1. 5n90a 5n90af.pdf 
Size:372K _nell
RoHS 5N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 900Volts) DESCRIPTION D The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G s
9.1. ssp5n90a.pdf Size:625K _fairchild_semi
SSP5N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
9.2. sss5n90a.pdf Size:499K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
9.3. ssp5n90a.pdf Size:856K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
9.4. ssh5n90a.pdf Size:934K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
9.5. cs5n90arh-g.pdf Size:609K _wuxi_china
Silicon N-Channel Power MOSFET R ○ CS5N90 ARH-G General Description： VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
