5N90AF Datasheet and Replacement
Type Designator: 5N90AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220F
5N90AF Datasheet (PDF)
5n90a 5n90af.pdf

RoHS 5N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 900Volts)DESCRIPTIOND The Nell 5N90 is a three-terminal silicon device withcurrent conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as Gs
ssp5n90a.pdf

SSP5N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
Datasheet: 5N60A , 5N60AF , 5N60G , 5N65A , 5N65AF , 5N65F , 5N65G , 5N90A , 10N65 , 65N06A , 65N06H , 6680A , 6HP04CH , 6HP04MH , 6LN04SS , 6N60A , 6N60AF .
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