6N80A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 6N80A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: TO-220AB

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6N80A datasheet

 ..1. Size:373K  nell
6n80a 6n80af.pdf pdf_icon

6N80A

RoHS 6N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 800Volts) DESCRIPTION The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

 ..2. Size:232K  inchange semiconductor
6n80a.pdf pdf_icon

6N80A

isc N-Channel MOSFET Transistor 6N80A FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) Avalanche Energy Specified Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls

 0.1. Size:263K  1
ssf6n80a.pdf pdf_icon

6N80A

SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 0.2. Size:863K  samsung
ssp6n80a.pdf pdf_icon

6N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

Otros transistores... 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, 6N60F, 6N60G, IRF520, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A