6N80A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 6N80A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de 6N80A MOSFET
- Selecciónⓘ de transistores por parámetros
6N80A datasheet
6n80a 6n80af.pdf
RoHS 6N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 800Volts) DESCRIPTION The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw
6n80a.pdf
isc N-Channel MOSFET Transistor 6N80A FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) Avalanche Energy Specified Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls
ssf6n80a.pdf
SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha
ssp6n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb
Otros transistores... 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, 6N60F, 6N60G, IRF520, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A
History: BL5N50-U | IPA60R380P6
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
f1010e mosfet | 2sc3883 | c3306 datasheet | hy3810 | c711 transistor | k3599 transistor datasheet | 2sc1735 | transistor 2sc5200
