6N80A. Аналоги и основные параметры
Наименование производителя: 6N80A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 140 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для 6N80A
- подборⓘ MOSFET транзистора по параметрам
6N80A даташит
6n80a 6n80af.pdf
RoHS 6N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 800Volts) DESCRIPTION The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw
6n80a.pdf
isc N-Channel MOSFET Transistor 6N80A FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) Avalanche Energy Specified Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls
ssf6n80a.pdf
SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha
ssp6n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb
Другие IGBT... 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, 6N60F, 6N60G, IRF520, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A
History: FDN360P | IPD50N06S2L-13
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